Advanced Power AP9971GI N-Channel Power MOSFET 60V 23A TO-220

Technical description of the product (AP9971GI):

Advanced Power AP9971GI N-Channel Power MOSFET. Maximum Drain-Source Voltage Vds(max): 60V. Maximum Drain-Source Leakage Current Idss: 25uA. Drain Current Id (T=25°C): 23A. Drain Current Id (T=100°C): 14A. On-Resistance Rds On: 0.036 Ohms. Package (according to datasheet): TO-220CFM. Package: TO-220. RoHS compliant: yes. Operating Temperature: -55...+150°C. Number of connections: 3. Mounting/Installation: Through-hole mounting for printed circuit boards. Channel Type: N. Transistor Type: MOSFET. Technology: ENHANCEMENT MODE POWER MOSFET. Gate-Source Protection: NO. Turn-off Delay Time Td(off): 26 ns. Minimum Drain-Source Leakage Current Idss: 10uA. Turn-on Delay Time Td(on): 9 ns. Quantity per package: 1. Pulsed Drain Current Id(imp): 80A. Minimum Gate-Source Threshold Voltage Vgs(th): 1V. Input Capacitance C(in): 1700pF. Output Capacitance C(out): 160pF. Minimum Diode Reverse Recovery Time Trr: 37 ns. Maximum Power Dissipation: 31.3W. Packaging: Plastic tube. Drain-Source Protection: Diode. Gate-Source Voltage Vgs: 20V. Packaging unit: 50.