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Stmicroelectronics

BYT30P-1000, 30A, 200A, TO-3P ( TO-218 SOT-93 ), 1000V

Product reference : BYT30P-1000
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Technical description of the product (BYT30P-1000):

BYT30P-1000, 30A, 200A, TO-3P ( TO-218 SOT-93 ), 1000V. Forward current (AV): 30A. IFSM: 200A. Housing: TO-3P ( TO-218 SOT-93 ). VRRM: 1000V. Assembly/installation: PCB through-hole mounting. Dielectric structure: Anode-Cathode. Forward voltage Vf (min): 1.8V. MRI (max): 5mA. MRI (min): 100uA. Note: metal part connected to the cathode. Number of terminals: 2. Operating temperature: -40...+150°C. Quantity per case: 1. RoHS: yes. Semiconductor material: silicon. Spec info: IFSM--200Ap t=10ms. Threshold voltage Vf (max): 1.9V. Trr Diode (Min.): 70 ns