Fairchild HGTG30N60B3D N-IGBT Transistor 600V 30A TO-247

Technical description of the product (HGTG30N60B3D):

Germanium diode: no. RoHS: yes. Operating temperature: -55...+150°C. Package: TO-247. CE Diode: no. Number of connections: 3. Mounting/installation: through-hole for printed circuit board. Channel type: N-P. Package (according to datasheet): TO-247 (AC) MOS-N-IGBT. Function: Ic 30A @ 25°C, 25A @ 110°C, Icm 220A (pulsed). Td(off): 137 ns. Collector-emitter voltage Vceo: 600V. Td(on): 36 ns. Collector-emitter saturation voltage VCE(sat): 1.45V. Gate-emitter voltage VGE: 20V. Max power dissipation: 208W. Gate-emitter threshold voltage VGE(th) min.: 4.2V. Gate-emitter threshold voltage VGE(th) max.: 6V.