Fairchild HGTG40N60B3 N-IGBT Transistor 600V 40A TO-247

Technical description of the product (HGTG40N60B3):

Germanium diode: no. RoHS: yes. Operating temperature: -55...+150°C. Package: TO-247. CE Diode: no. Number of connections: 3. Mounting/installation: through-hole for printed circuit board. Channel type: N-P. Package (according to datasheet): TO-247 (AC) MOS-N-IGBT. Function: Ic 70A @ 25°C, 40A @ 110°C, Icm 330A (pulsed). Td(off): 170 ns. Collector-emitter voltage Vceo: 600V. Td(on): 47 ns. Collector-emitter saturation voltage VCE(sat): 1.4V. Gate-emitter voltage VGE: 20V. Max power dissipation: 290W. Gate-emitter threshold voltage VGE(th) min.: 3V. Gate-emitter threshold voltage VGE(th) max.: 6V.