Fuji Electric 2SK1217 N-Channel MOSFET 900V 8A 1.5 Ohm TO-3PF

Technical description of the product (2SK1217):

Voltage Vds(max): 900V. Idss (max): 500uA. ID (T=25°C): 8A. On-resistance Rds(on): 1.5 Ohms. Housing (according to data sheet): TO-3PF. Housing: TO-3PF (SOT399, 2-16E3A). RoHS: yes. Operating temperature: -55...+150°C. Number of terminals: 3. Assembly/installation: PCB through-hole mounting. Channel type: N. Type of transistor: MOSFET. Function: Low Driving Power High Speed Switching. Technology: V-MOS. G-S Protection: no. Td(off): 300 ns. IDss (min): 10uA. Td(on): 50 ns. Quantity per case: 1. Id(imp): 23A. Vgs(th) min.: 2.5V. C(in): 1400pF. C(out): 200pF. Trr Diode (Min.): 1000 ns. Pd (Power Dissipation, Max): 100W. Drain-source protection: diode. Gate/source voltage Vgs: 30V. Vgs(th) max.: 5V.