Fuji Electric 2SK2647 N-Channel MOSFET, 800V, 4A, 3.19 Ohm, TO-220F15 Package

Technical description of the product (2SK2647):

Drain-Source Voltage Vds(max): 800V. Drain-Source Leakage Current Idss(max): 200uA. Continuous Drain Current Id (T=25°C): 4A. Continuous Drain Current Id (T=100°C): 4A. On-State Resistance Rds(On): 3.19 Ohms. Package (according to datasheet): TO-220F15. Package: TO-220. Number of Pins: 3. Mounting Type: Through-hole. Channel Type: N. Transistor Type: MOSFET. Function: High speed switching. Technology: FAP-IIS Series MOS-FET. Gate-Source Protection: No. Turn-off Delay Time Td(off): 50 ns. Drain-Source Leakage Current Idss(min): 10uA. Turn-on Delay Time Td(on): 20 ns. Quantity per Package: 1. Pulsed Drain Current Id(imp): 16A. Package Marking: K2647. Gate-Source Threshold Voltage Vgs(th) min.: 3.5V. Input Capacitance C(in): 450pF. Output Capacitance C(out): 75pF. Diode Reverse Recovery Time Trr (Min.): 450 ns. Maximum Power Dissipation: 40W. Drain-Source Protection: Diode. Gate-Source Voltage Vgs: 30V. Gate-Source Threshold Voltage Vgs(th) max.: 4.5V. Temperature: +150°C.