Hitachi 2SK1170 N-Channel MOSFET, 500V, 20A, 0.27 Ohm, TO-3P Package

Technical description of the product (2SK1170):

Drain-Source Voltage Vds(max): 500V. Drain-Source Leakage Current Idss(max): 250uA. Continuous Drain Current Id (T=25°C): 20A. On-State Resistance Rds(On): 0.27 Ohms. Package (according to datasheet): TO-3P. Package: TO-3P (TO-218 SOT-93). Operating Temperature: -55...+150°C. Special Features: High speed switching, low drive current. Number of Pins: 3. Mounting Type: Through-hole. Channel Type: N. Transistor Type: MOSFET. Function: N-Channel MOSFET. Technology: V-MOS. Gate-Source Protection: Yes. Turn-off Delay Time Td(off): 200 ns. Turn-on Delay Time Td(on): 32 ns. Quantity per Package: 1. Pulsed Drain Current Id(imp): 80A. Input Capacitance C(in): 2800pF. Output Capacitance C(out): 780pF. Diode Reverse Recovery Time Trr (Min.): 500 ns. Maximum Power Dissipation: 120W. Drain-Source Protection: Diode. Gate-Source Voltage Vgs: 30V.