Infineon SPP11N60C3 N-Channel CoolMOS Power MOSFET, 650V, 11A, TO-220

Technical description of the product (SPP11N60C3):

Drain-Source Voltage Vds(max): 650V. Drain-Source Leakage Current Idss (max): 100uA. Drain Current Id (T=25°C): 11A. Drain Current Id (T=100°C): 7A. On-State Resistance Rds On: 0.34 Ohms. Package (according to datasheet): TO-220. Package: TO-220. RoHS: yes. Operating Temperature: -55...+150°C. Number of Pins: 3. Mounting/Installation: Through-hole mounting for PCB. Channel Type: N. Transistor Type: MOSFET. Function: Extreme dv/dt rated, high peak current capability. Technology: Cool Mos POWER Transistor. Gate-Source Protection: no. Turn-off Delay Time Td(off): 44 ns. Drain-Source Leakage Current Idss (min): 0.1uA. Turn-on Delay Time Td(on): 10 ns. Quantity per Package: 1. Pulsed Drain Current Id(imp): 33A. Marking on Package: 11N60C3. Gate-Source Threshold Voltage Vgs(th) min.: 2.1V. Input Capacitance C (in): 1200pF. Output Capacitance C (out): 390pF. Diode Reverse Recovery Time Trr (Min.): 400 ns. Max Power Dissipation: 125W. Drain-Source Protection: Zener diode. Gate-Source Voltage Vgs: 20V. Gate-Source Threshold Voltage Vgs(th) max.: 3.9V