Infineon SPU04N60C3 N-Channel CoolMOS Power MOSFET, 650V, 4.5A, TO-251 (I-Pak)

Technical description of the product (SPU04N60C3):

Drain-Source Voltage Vds(max): 650V. Drain-Source Leakage Current Idss (max): 50uA. Drain Current Id (T=25°C): 4.5A. Drain Current Id (T=100°C): 2.8A. On-State Resistance Rds On: 0.85 Ohms. Package (according to datasheet): TO-251 (I-Pak). Package: TO-251 (I-Pak). Operating Temperature: -55...+150°C. Number of Pins: 3. Mounting/Installation: Through-hole mounting for PCB. Channel Type: N. Transistor Type: MOSFET. Function: Ultra low gate charge, extreme dv/dt rated. Technology: Cool Mos. Gate-Source Protection: no. Turn-off Delay Time Td(off): 58.5 ns. Drain-Source Leakage Current Idss (min): 0.5uA. Turn-on Delay Time Td(on): 6 ns. Quantity per Package: 1. Pulsed Drain Current Id(imp): 13.5A. Marking on Package: 04N60C3. Gate-Source Threshold Voltage Vgs(th) min.: 2.1V. Input Capacitance C (in): 490pF. Output Capacitance C (out): 160pF. Diode Reverse Recovery Time Trr (Min.): 300 ns. Max Power Dissipation: 50W. Drain-Source Protection: Zener diode. Gate-Source Voltage Vgs: 20V