IXYS IXFH32N50 N-Channel HiPerFET Power MOSFET, 500V Drain-Source, 32A Drain Current, TO-247AD Packa

Technical description of the product (IXFH32N50):

This IXYS IXFH32N50 N-Channel HiPerFET Power MOSFET features a maximum drain-source voltage (Vds) of 500V and a continuous drain current (ID) of 32A at 25°C. Its on-resistance (Rds On) is 0.15 Ohms. The component is housed in a TO-247AD package, suitable for PCB through-hole mounting. It operates within a temperature range of -55°C to +150°C and is RoHS compliant. Key specifications include a power dissipation (Pd) of 360W, a gate-source voltage (Vgs) of 20V, and a turn-on delay time (Td(on)) of 35 ns. It offers drain-source protection.