N-channel transistor BSS123, SOT-23 ( TO-236 ), 100V, 150mA, 100uA, 3.5 Ohms, SOT-23 ( TO236 ), 100V

Technical description of the product (BSS123):

Vdss (Drain to Source Voltage): 100V. Voltage Vds(max): 100V. Idss (max): 100uA. ID (T=25°C): 150mA. On-resistance Rds On: 3.5 Ohms. Housing (according to data sheet): SOT-23 ( TO236 ). Housing: SOT-23 ( TO-236 ). RoHS: yes. Polarity: unipolar. Operating temperature: -55...+150°C. Number of terminals: 3. Assembly/installation: surface-mounted component (SMD). Channel type: N. Type of transistor: MOSFET. Function: screen printing/SMD code SA. Technology: N-channel TrenchMOS transistor Logic level FET. Equivalents: BSS123LT1G, BSS123-7-F. Rds On (Max) @ Id, Vgs: 6 Ohms / 120mA / 10V. G-S Protection: no. Td(off): 12 ns. IDss (min): 10uA. Power: 360mW. Td(on): 3 ns. Vgs(th) (Max) @ Id: 2.5V @ 250µA. Quantity per case: 1. Manufacturer's marking: BSS123-7-F. Id(imp): 600mA. On-state resistance: 6 Ohms. Marking on the case: SA. Vgs(th) min.: 1V. Drain current: 170mA. Mounting Type: SMD. C(in): 23pF. MSL: 1. Qg (Total Gate Charge, Max @ Vgs): 1.8nC @ 10V. Cost): 6pF. Trr Diode (Min.): 11 ns. Gate/source voltage Vgs max: ±20V. Drain-source voltage: 100V. Pd (Power Dissipation, Max): 0.25W. Drain-source protection : yes. Gate/source voltage (off) max.: 2.8V. Gate/source voltage Vgs: 20V. Id @ Tc=25°C (Continuous Drain Current): 150mA