Out of stock
Magnachip Semiconductor
N-channel transistor MBQ60T65PES, 650V, 60A, TO-247, TO-247
Product reference : MBQ60T65PES
Volume discounts — Save when you buy
| Quantity | Unit price | Save |
|---|---|---|
| 1 – 59 | 8.60 € | — |
| 60+Best price | 8.15 € | -5% |
Technical description of the product (MBQ60T65PES):
Collector/emitter voltage Vceo: 650V. Ic(T=100°C): 60A. Housing (according to data sheet): TO-247. Housing: TO-247. Germanium diode: no. RoHS: yes. Operating temperature: -55...+150°C. CE diode: yes. Number of terminals: 3. Assembly/installation: PCB through-hole mounting. Channel type: N. Technology: High Speed Fieldstop Trench IGBT, Second Generation. Td(off): 142ns. Td(on): 45 ns. Saturation voltage VCE(sat): 1.85V. Ic(pulse): 180A. Marking on the case: 60T65PES. Gate/emitter voltage VGE: 20V. Pd (Power Dissipation, Max): 535W. Conditioning: plastic tube. Maximum saturation voltage VCE(sat): 2.4V. Gate/emitter voltage VGE(th) min.: 4V. Gate/emitter voltage VGE(th)max.: 6V. Collector current: 100A. Conditioning unit: 30