Stmicroelectronics BUZ72A N-Channel Enhancement Mode Power MOSFET Transistor, TO-220AB, 100V Vds, 11

Technical description of the product (BUZ72A):

Voltage Vds(max): 100V. Idss (max): 250uA. ID (T=25°C): 11A. ID (T=100°C): 7A. On-resistance Rds On: 0.23 Ohms. Housing (according to data sheet): TO-220AB. Housing: TO-220. Number of terminals: 3. Assembly/installation: PCB through-hole mounting. Channel type: N. Type of transistor: MOSFET. Technology: Enhancement Mode Power MOSFET Transistor. Max temperature: +175°C. G-S Protection: no. Td(off): 25 ns. Td(on): 10 ns. Quantity per case: 1. Id(imp): 44A. Vgs(th) min.: 2V. C(in): 330pF. C(oss): 90pF. Trr Diode (Min.): 80 ns. Pd (Power Dissipation, Max): 70W. Drain-source protection: zener diode. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4V.