STMicroelectronics STB12NM50N N-Channel MDmesh Power MOSFET, 550V, 11A, D2PAK (TO-263)

Technical description of the product (STB12NM50N):

Drain-Source Voltage Vds(max): 550V. Drain-Source Leakage Current Idss (max): 100uA. Drain Current Id (T=25°C): 11A. Drain Current Id (T=100°C): 6.8A. On-State Resistance Rds On: 0.29 Ohms. Package (according to datasheet): D2PAK (TO-263). Package: D2PAK (TO-263). RoHS: yes. Number of Pins: 2. Mounting/Installation: Surface Mount Device (SMD). Channel Type: N. Transistor Type: MOSFET. Function: High dv/dt, low gate capacitance. Technology: MDmesh Power MOSFET. Gate-Source Protection: no. Turn-off Delay Time Td(off): 60 ns. Drain-Source Leakage Current Idss (min): 1uA. Turn-on Delay Time Td(on): 15 ns. Quantity per Package: 1. Pulsed Drain Current Id(imp): 44A. Marking on Package: B12NM50N. Gate-Source Threshold Voltage Vgs(th) min.: 2V. Input Capacitance C (in): 940pF. Output Capacitance C (out): 100pF. Diode Reverse Recovery Time Trr (Min.): 340 ns. Max Power Dissipation: 100W. Drain-Source Protection: yes. Gate-Source Voltage Vgs: 25V. Temperature: +150°C