Stmicroelectronics STP11NM60 N-Channel MDmesh Power MOSFET, 600V Drain-Source, 11A Continuous Drain

Technical description of the product (STP11NM60):

Max. Drain-Source Voltage Vds(max): 600V. Max. Drain-Source Leakage Current Idss (max): 10uA. Continuous Drain Current ID (T=25°C): 11A. Continuous Drain Current ID (T=100°C): 7A. On-resistance Rds On: 0.4 Ohms. Package: TO-220. RoHS Compliant: Yes. Special Features: High dv/dt and Avalanche Capabilities. Number of Terminals: 3. Mounting Type: PCB Through-Hole Mounting. Channel Type: N-Channel. Transistor Type: MOSFET. Key Characteristics: Low Input Capacitance, Low On-Resistance, Low Gate Charge. Technology: MDmesh Power MOSFET. Max. Operating Temperature: +150°C. Gate-Source Protection: No. Turn-off Delay Time Td(off): 6 ns. Min. Drain-Source Leakage Current IDss (min): 1uA. Turn-on Delay Time Td(on): 20 ns. Pulsed Drain Current Id(imp): 44A. Min. Gate-Source Threshold Voltage Vgs(th): 3V. Input Capacitance C(in): 1000pF. Output Capacitance C(oss): 230pF. Diode Reverse Recovery Time Trr (Min.): 390 ns. Max. Power Dissipation Pd: 160W. Drain-Source Protection: Zener Diode. Max. Gate-Source Voltage Vgs: 30V. Packaging: Plastic tube, 50 units per tube.