STMicroelectronics STP200N4F3 N-Channel STripFET™ Power MOSFET, 40V, 60.4k Ohms, TO-220

Technical description of the product (STP200N4F3):

Drain-Source Voltage Vds(max): 40V. Drain-Source Leakage Current Idss (max): 100uA. Drain Current Id (T=25°C): 60.4k Ohms. Drain Current Id (T=100°C): 60.4k Ohms. On-State Resistance Rds On: 3M Ohms. Package (according to datasheet): TO-220. Package: TO-220. RoHS: yes. Operating Temperature: -55...+175°C. Number of Pins: 3. Mounting/Installation: Through-hole mounting for PCB. Channel Type: N. Transistor Type: MOSFET. Function: Switching, automotive applications. Technology: STripFET™ Power MOSFET. Gate-Source Protection: no. Turn-off Delay Time Td(off): 90 ns. Drain-Source Leakage Current Idss (min): 10uA. Turn-on Delay Time Td(on): 19 ns. Quantity per Package: 1. Pulsed Drain Current Id(imp): 480A. Marking on Package: 200N4F3. Gate-Source Threshold Voltage Vgs(th) min.: 2V. Input Capacitance C (in): 5100pF. Output Capacitance C (out): 1270pF. Diode Reverse Recovery Time Trr (Min.): 67 ns. Max Power Dissipation: 300W. Drain-Source Protection: Zener diode. Gate-Source Voltage Vgs: 20V. Gate-Source Threshold Voltage Vgs(th) max.: 4V