STMicroelectronics STP4NB80 N-Channel PowerMESH MOSFET, 800V, 4A

Technical description of the product (STP4NB80):

Drain-Source Voltage Vds(max): 800V. Drain-Source Leakage Current Idss (max): 50uA. Drain Current Id (T=25°C): 4A. Drain Current Id (T=100°C): 2A. On-State Resistance Rds On: 3 Ohms. Channel Type: N. Transistor Type: MOSFET. Function: High current, high speed switching. Technology: PowerMESH MOSFET. Gate-Source Protection: no. Turn-off Delay Time Td(off): 12 ns. Drain-Source Leakage Current Idss (min): 1uA. Turn-on Delay Time Td(on): 14 ns. Quantity per Package: 1. Pulsed Drain Current Id(imp): 16A. Gate-Source Threshold Voltage Vgs(th) min.: 3V. Input Capacitance C (in): 700pF. Output Capacitance C (out): 95pF. Diode Reverse Recovery Time Trr (Min.): 600 ns. Max Power Dissipation: 100W. Drain-Source Protection: yes. Gate-Source Threshold Voltage Vgs(th) max.: 5V