Toshiba 2SK3878 N-Channel MOSFET 900V 9A TO-3P

Technical description of the product (2SK3878):

Voltage Vds(max): 900V. Idss (max): 100uA. ID (T=25°C): 9A. ID (T=100°C): 5.3A. On-resistance Rds On: 1 Ohm. Housing (according to data sheet): TO-3P. Housing: TO-3P ( TO-218 SOT-93 ). RoHS: yes. Operating temperature: -55...+150°C. Spec info: Vth=2.0 to 4.0V (VDS=10V, ID=1mA). Number of terminals: 3. Assembly/installation: PCB through-hole mounting. Channel type: N. Type of transistor: MOSFET. Function: Switching Regulator Applications. G-S Protection: yes. Td(off): 120ns. IDss (min): 1uA. Td(on): 65 ns. Quantity per case: 1. Id(imp): 27A. Marking on the case: K3878. Vgs(th) min.: 2V. C(in): 2200pF. C(out): 45pF. Trr Diode (Min.): 1.4us. Pd (Power Dissipation, Max): 150W. Conditioning: plastic tube. Drain-source protection : diode. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Conditioning unit: 25